Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. - Simon Van Beek; Koen Martens; Philippe Roussel; Gabriele Luca Donadio; Johan Swerts; Sofie Mertens; Gouri Sankar Kar; Tai Min; Guido Groeseneken (IRPS, 2015)

Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications. - Hyungrock Oh; Attilio Belmonte; Manu Perumkunnil; Jérôme Mitard; Nouredine Rassoul; Gabriele Luca Donadio; Romain Delhougne; Arnaud Furnémont; Gouri Sankar Kar; Wim Dehaene (ESSDERC, 2021)

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. - Taras Ravsher; Daniele Garbin; Andrea Fantini; Robin Degraeve; Sergiu Clima; Gabriele Luca Donadio; Shreya Kundu; Hubert Hody; Wouter Devulder; Jan Van Houdt; Valeri Afanas'ev; Romain Delhougne; et al. (VLSI Technology and Circuits, 2022)

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. - Taras Ravsher; Robin Degraeve; Daniele Garbin; Sergiu Clima; Andrea Fantini; Gabriele Luca Donadio; Shreya Kundu; Wouter Devulder; Hubert Hody; Goedele Potoms; Jan Van Houdt; Valeri Afanas'ev; et al. (IRPS, 2024)