Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. - Gaelle Beylier; Sylvie Bruyère; Darcy Benoit; Gérard Ghibaudo (Microelectron. Reliab., 2007)

Impact of silicon nitride CESL on NLDEMOS transistor reliability. - Gaelle Beylier; Sylvie Bruyère; Darcy Benoit; Gérard Ghibaudo (Microelectron. Reliab., 2008)

Characterization and Modelling of High Speed Ge Photodetectors Reliability. - Fatoumata Sy; Quentin Rafhay; Julien Poëtte; Gregory Grosa; C. Besset; Gaelle Beylier; Philippe Grosse; David Roy; Jean-Emmanuel Broquin (IRPS, 2019)