Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. - Seonhaeng Lee; Dongwoo Kim 005; Cheolgyu Kim; N.-H. Lee; Gang-Jun Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. - Seonhaeng Lee; Cheolgyu Kim; Hyeokjin Kim; Gang-Jun Kim; Ji-Hoon Seo; Donghee Son; Bongkoo Kang (Microelectron. Reliab., 2013)

Degradation of pMOSFETs due to hot electron induced punchthrough. - Donghee Son; Gang-Jun Kim; Ji-Hoon Seo; Nam-Hyun Lee; YongHa Kang; Bongkoo Kang (Microelectron. Reliab., 2016)

Channel width dependence of AC stress on bulk nMOSFETs. - Donghee Son; Gang-Jun Kim; Ji-Hoon Seo; Nam-Hyun Lee; YongHa Kang; Bongkoo Kang (Microelectron. Reliab., 2016)

Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. - Jongkyun Kim; Namhyun Lee; Gang-Jun Kim; Young-Yun Lee; Jung-Eun Seok; Yunsung Lee (Microelectron. Reliab., 2018)

Effect of DC/AC stress on the reliability of cell capacitor in DRAM. - Gang-Jun Kim; Nam-Hyun Lee; Jongkyun Kim; Jung Eun Seok; Yunsung Lee (Microelectron. Reliab., 2018)

Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. - Yeohyeok Yun; Gang-Jun Kim; Ji-Hoon Seo; Donghee Son; Bongkoo Kang (Microelectron. Reliab., 2018)

The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress. - Gang-Jun Kim; Moonjee Yoon; SungHwan Kim; Myeongkyu Eo; Shinhyung Kim; Taehun You; Namhyun Lee; Kijin Kim; Sangwoo Pae (IRPS, 2021)

Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM. - Donghee Son; Gang-Jun Kim; Jongkyun Kim; Nam-Hyun Lee; Kijin Kim; Sangwoo Pae (IRPS, 2021)

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. - Jun Hui Park; Jung Nam Kim; Seonhaeng Lee; Gang-Jun Kim; Namhyun Lee; Rock-Hyun Baek; Dae Hwan Kim; Changhyun Kim; Myounggon Kang; Yoon Kim (IEEE Access, 2024)

Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications. - Gang-Jun Kim; Taehun You; Sewon Jeon; Seung Hwan Kwak; Hwangju Song; Shinhyung Kim; Nam-Jae Kim; Jaeyeop Ahn; Hyuk Park 006; Seonhaeng Lee; Nam-Hyun Lee; Young Hoon Cho; et al. (IRPS, 2025)