High power IGCT compact model with impact ionization effect. - Gang Lyu; Wenpeng Zhou; Jiapeng Liu; Rong Zeng 001 (IECON, 2017)

A Review of Alzheimer's Disease Classification Using Neuropsychological Data and Machine Learning. - Gang Lyu (CISP-BMEI, 2018)

Analysis and Experiments for IGBT, IEGT, and IGCT in Hybrid DC Circuit Breaker. - Zhengyu Chen 004; Zhanqing Yu; Xiangyu Zhang 004; Tianyu Wei; Gang Lyu; Lu Qu; Yulong Huang; Rong Zeng 001 (IEEE Trans. Ind. Electron., 2018)

Automatic selection of lexical features for detecting Alzheimer's disease using bag-of-words model and genetic algorithm. - Gang Lyu; Aimei Dong (Int. J. Comput. Appl. Technol., 2019)

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices. - Yuru Wang; Gang Lyu; Jin Wei; Zheyang Zheng; Jiabei He; Jiacheng Lei; Kevin J. Chen (IEEE Trans. Ind. Electron., 2020)

Learning-based extraction of first-order logic representations of API directives. - Mingwei Liu 002; Xin Peng 001; Andrian Marcus; Christoph Treude; Xuefang Bai; Gang Lyu; Jiazhan Xie; Xiaoxin Zhang (ESEC/SIGSOFT FSE, 2021)

Precise Measurement Methodology of nH-Level Gate Electrode Inductance Based on Calculation-Error-Free Algorithm for Unity-Gain Turn-Off Devices. - Jiapeng Liu; Biao Zhao; Wenpeng Zhou; Gang Lyu; Zhengyu Chen 004; Chaoqun Xu; Zhanqing Yu; Rong Zeng 001 (IEEE Trans. Ind. Electron., 2021)

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device. - Gang Lyu; Jiahui Sun; Yuru Wang; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs. - Jiahui Sun; Kailun Zhong; Zheyang Zheng; Gang Lyu; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications. - Kailun Zhong; Yuru Wang; Gang Lyu; Jin Wei; Jiahui Sun; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

IGBT Junction Temperature Monitoring Method Current Calibration Free Based on the Narrow Pulse Injection. - Yanyong Yang; Xiaofeng Ding 002; Gaoyang Sun; Gang Lyu; Pinjia Zhang (IEEE Trans. Ind. Electron., 2024)