Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. - Gangping Yan; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Linjie Fan; Huaxiang Yin (IEEE Access, 2020)

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations. - Linjie Fan; Jinshun Bi; Kai Xi; Gangping Yan (Sensors, 2020)

Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors. - Liang Xiang; Gangping Yan; Yunfei Shi; Hong Yang; Shangbo Yang; Gaobo Xu; Xiaolei Wang; Guilei Wang; Huaxiang Yin; Chao Zhao; Jun Luo; Wenwu Wang 006 (IRPS, 2025)