Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. - Yannan Xu; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Ming Liu 022 (Sci. China Inf. Sci., 2017)

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. - Gangping Yan; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Linjie Fan; Huaxiang Yin (IEEE Access, 2020)

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. - Guoliang Tian; Jinshun Bi; Gaobo Xu; Kai Xi; Xueqin Yang; Sandip Majumdar; Huaxiang Yin; Qiuxia Xu; Wenwu Wang 006 (Sci. China Inf. Sci., 2020)

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. - Xueqin Yang; Yannan Xu; Jinshun Bi; Kai Xi; Linjie Fan; Lanlong Ji; Gaobo Xu (Sci. China Inf. Sci., 2022)

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. - Zhaohao Zhang; Guoliang Tian; Jiali Huo; Fang Zhang; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Yan Cheng; Yan Liu; Huaxiang Yin (Sci. China Inf. Sci., 2023)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. - Fan Zhang; Zhaohao Zhang; Jiaxin Yao; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Huan Liu; Genquan Han; Yan Liu; Huaxiang Yin (Sci. China Inf. Sci., 2024)

Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors. - Liang Xiang; Gangping Yan; Yunfei Shi; Hong Yang; Shangbo Yang; Gaobo Xu; Xiaolei Wang; Guilei Wang; Huaxiang Yin; Chao Zhao; Jun Luo; Wenwu Wang 006 (IRPS, 2025)

An AND-type 1T-FeFET array with robust write and read operations. - Jiacheng Xu; Jiayi Zhao; Hongrui Zhang; Haoji Qian; Jiani Gu; Bowen Chen; Gaobo Lin; Rongzong Shen; Xinda Song; Huan Liu; Yian Ding; Minglei Ma; et al. (Sci. China Inf. Sci., 2025)