The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory. - Jaeyun Yi; Myoungsub Kim; Jungwon Seo; Namkyun Park; Seungyun Lee; Jongil Kim; Gapsok Do; Hongjin Jang; Hyochol Koo; Sunglae Cho; Sujin Chae; Taehoon Kim; et al. (VLSI Technology and Circuits, 2023)

First Demonstration of Fully Integrated 16 nm Half-Pitch Selector Only Memory (SOM) for Emerging CXL Memory. - Myoungsub Kim; Yooncheol Bae; Jaehyuk Park; Jeongho Yeon; Hyungjoon Shim; Sehyun Jin; Hyunsoo Kim; Sangchul Oh; Gapsok Do; Dongyeol Yun; Hyung Dong Lee; David Ahn; et al. (VLSI Technology and Circuits, 2024)