A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate. - Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-Ling Kao; Geng-Yen Lee; Jen-Inn Chyi; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2012)

N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. - Hsien-Chin Chiu; Chia-Hsuan Wu; Ji-Fan Chi; Jen-Inn Chyi; Geng-Yen Lee (Microelectron. Reliab., 2015)