Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. - V. S. Pershenkov; S. V. Avdeev; A. S. Tsimbalov; M. N. Levin; V. V. Belyakov; D. V. Ivashin; A. Y. Slesarev; A. Y. Bashin; Gennady I. Zebrev; Viktor N. Ulimov (Microelectron. Reliab., 2002)

Physics-based modeling of TID induced global static leakage in different CMOS circuits. - Gennady I. Zebrev; Vasily V. Orlov; Maxim S. Gorbunov; Maxim G. Drosdetsky (Microelectron. Reliab., 2018)