Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection. - Shuiying Xiang; Yanan Han; Xingxing Guo; Aijun Wen; Genquan Han; Yue Hao 001 (Sci. China Inf. Sci., 2020)

Recent progress of integrated circuits and optoelectronic chips. - Yue Hao 001; Shuiying Xiang; Genquan Han; Jincheng Zhang; Xiaohua Ma 001; Zhangming Zhu; Xingxing Guo; Yahui Zhang; Yanan Han; Ziwei Song; Yan Liu; Ling Yang 003; et al. (Sci. China Inf. Sci., 2021)

High mobility germanium-on-insulator p-channel FinFETs. - Huan Liu; Genquan Han; Jiuren Zhou; Yan Liu; Yue Hao 001 (Sci. China Inf. Sci., 2021)

Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification. - Shuiying Xiang; Zhenxing Ren; Ziwei Song; Yahui Zhang; Xingxing Guo; Genquan Han; Yue Hao 001 (IEEE Trans. Neural Networks Learn. Syst., 2021)

Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations. - Lulu Chou; Xiao Yu; Huan Liu; Yan Liu; Genquan Han; Yue Hao 001 (ICICDT, 2022)

Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise. - Xinze Li; Ying Sun; Jing Wan; Bing Chen; Ran Cheng; Genquan Han (ICICDT, 2022)

Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling. - Huan Liu; Jiajia Chen; Chengji Jin; Yan Liu; Genquan Han; Xiao Yu (ICICDT, 2022)

4H-SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications. - Yagong Nan; Genquan Han (Microelectron. J., 2022)

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology. - Yiqin Zeng; Zhetao Ding; Xueyang Li; Minglei Ma; Yue Peng; Rongzong Shen; Gaobo Lin; Chengji Jin; Xiao Yu; Bing Chen; Ran Cheng; Genquan Han (ESSDERC, 2023)

Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors. - Jiajia Chen; Jiani Gu; Zhi Gong; Chengji Jin; Huan Liu; Xiao Yu; Genquan Han (ICICDT, 2023)

Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory. - Wenwu Xiao; Yue Peng; Yan Liu; Huifu Duan; Fujun Bai; Bing Yu; Qiwei Ren; Xiao Yu; Genquan Han (Sci. China Inf. Sci., 2023)

Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. - Fenning Liu; Yue Peng; Wenwu Xiao; Yan Liu; Xiao Yu; Genquan Han (Sci. China Inf. Sci., 2023)

Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. - Huan Liu; Jiajia Chen; Chengji Jin; Xiao Yu; Yan Liu; Genquan Han (Sci. China Inf. Sci., 2023)

A compact model of DC I-V characteristics for depleted Ga2O3 MOSFETs. - Xiaole Jia; Yibo Wang; Jinyu Yang; Yan Liu; Yue Hao 001; Genquan Han (Microelectron. J., 2023)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. - Xinze Li; Yiqin Zeng; Yuxuan Wu; Ying Sun; Junru Qu; Chengji Jin; Jiani Gu; Rongzong Shen; Gaobo Lin; Dawei Gao; Xiao Yu; Bing Chen; et al. (IRPS, 2024)

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET. - Junru Qu; Dong Liu; Bing Chen; Ying Sun; Xinze Li; Chengji Jin; Jiajia Chen; Haoji Qian; Rongzong Shen; Xiao Yu; Dawei Gao; Ran Cheng; et al. (IRPS, 2024)

Accurate Charge-Domain Bootstrapped Computing-in-Memory SRAM Design with Wide Programmable Output Voltage Range. - Fuyi Li; Yu Xia; Shuai Xiao; Pengcheng Yang; Xingyu Zhu; Bo Li; Jiuren Zhou; Genquan Han; Wei Mao 002 (SOCC, 2024)

Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum. - Ruoying Kanyang; Cizhe Fang; Yibo Wang; Xiaoxi Li; Xiangyu Zeng; Yan Liu; Yue Hao 001; Genquan Han (Sci. China Inf. Sci., 2024)

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition. - Yang Li; Danyang Yao; Yan Liu; Zhi Jiang; Ruiqing Wang; Xu Ran; Jiuren Zhou; Qikun Wang; Guoqiang Wu; Genquan Han (Sci. China Inf. Sci., 2024)

Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. - Huan Liu; Qiyu Yang; Chengji Jin; Jiajia Chen; Lulu Chou; Xiao Yu; Yan Liu; Genquan Han (Sci. China Inf. Sci., 2024)

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. - Qiyu Yang; Zheng-Dong Luo; Fei Xiao; Junpeng Zhang; Dawei Zhang; Dongxin Tan; Xuetao Gan; Yan Liu; Zhufei Chu; Yinshui Xia; Genquan Han (Sci. China Inf. Sci., 2024)

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic. - Yong Zhang; Dongxin Tan; Cizhe Fang; Zheng-Dong Luo; Qiyu Yang; Qiao Zhang; Yu Zhang; Xuetao Gan; Yan Liu; Yue Hao 001; Genquan Han (Sci. China Inf. Sci., 2024)

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. - Fan Zhang; Zhaohao Zhang; Jiaxin Yao; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Huan Liu; Genquan Han; Yan Liu; Huaxiang Yin (Sci. China Inf. Sci., 2024)

Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories. - Zhe Wang; Yan Liu; Jiuren Zhou; Genquan Han (Microelectron. J., 2024)

A Low-Power Charge-Domain Bit-Scalable Readout System for Fully-Parallel Computing-in-Memory Accelerators. - Wei Mao 002; Fuyi Li; Jun Liu; Rui Xiao; Kejie Huang; Yongfu Li 002; Hao Yu 001; Yan Liu 016; Genquan Han (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements. - Chenyu Liu; Yibo Wang; Wenhui Xu; Shuqi Huang; Chunxiao Yu; Zeyu Yang; Xiaole Jia; Xiaoxi Li; Bochang Li; Zheng-Dong Luo; Cizhe Fang; Yan Liu; et al. (Sci. China Inf. Sci., 2025)

Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. - Tongtong Wang; Yong Zhang; Danyang Yao; Zhi Jiang; Dongxin Tan; Jie Wen; Qiyu Yang; Xuetao Gan; Yan Liu; Yue Hao 001; Genquan Han (Sci. China Inf. Sci., 2025)

Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors. - Jie Wen; Fei Xiao; Zheng-Dong Luo; Dongxin Tan; Xuetao Gan; Dawei Zhang; Zhufei Chu; Yinshui Xia; Yan Liu; Genquan Han (Sci. China Inf. Sci., 2025)

An AND-type 1T-FeFET array with robust write and read operations. - Jiacheng Xu; Jiayi Zhao; Hongrui Zhang; Haoji Qian; Jiani Gu; Bowen Chen; Gaobo Lin; Rongzong Shen; Xinda Song; Huan Liu; Yian Ding; Minglei Ma; et al. (Sci. China Inf. Sci., 2025)

A Weighted Low-Rank and Sparse Constraint-Based Multichannel Radar Forward-Looking Imaging Method. - Junkui Tang; Lei Ran; Zheng Liu 015; Rong Xie; Yan Liu; Genquan Han (IEEE J. Sel. Top. Appl. Earth Obs. Remote. Sens., 2025)

Multichannel Radar Forward-Looking Super-Resolution Imaging Method Based on Structured Sparsity. - Junkui Tang; Lei Ran; Zheng Liu 015; Rong Xie; Yan Liu; Genquan Han (IEEE Trans. Geosci. Remote. Sens., 2025)