Accurate large-signal FET model tailored for switching-mode power amplifier design. - Linsheng Liu; Jianguo Ma; Geok Ing Ng (IEICE Electron. Express, 2010)

High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application. - Masayuki Abe; Noriaki Kogushi; Kian Siong Ang; René Hofstetter; Kumar Manoj; Louis Nicholas Retnam; Hong Wang; Geok Ing Ng; Chong Jin; Dimitris Pavlidis (IEICE Trans. Electron., 2012)

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation. - Govindo J. Syaranamual; Wardhana A. Sasangka; Riko I. Made; Subramaniam Arulkumaran; Geok Ing Ng; Siew Chuen Foo; Chee Lip Gan; Carl V. Thompson (Microelectron. Reliab., 2016)

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. - Abhinay Sandupatla; Subramaniam Arulkumaran; Kumud Ranjan; Geok Ing Ng; Peter P. Murmu; John Kennedy; Shugo Nitta; Yoshio Honda; Manato Deki; Hiroshi Amano (Sensors, 2019)

A Wideband GaN HEMT Modelling with Comprehensive Hybrid Parameter Extraction for 5G Power Amplifiers. - Zhongzhiguang Lu; Hanlin Xie; Jiaming Piao; Wei Zhengzhe; Geok Ing Ng; Yuanjin Zheng (ISCAS, 2023)

An ANN-Physical Hybrid GaN HEMT Model for 5G Power Amplifiers. - Zhongzhiguang Lu; Hanchao Li; Yihao Zhuang; Hanlin Xie; Geok Ing Ng; Yuanjin Zheng (APCCAS, 2024)

Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited). - Geok Ing Ng; Hanlin Xie; Hanchao Li (TENCON, 2024)