A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Hank Cheng; Wei-Min Chan; Hung-Jen Liao; Quincy Li; Stanley Chang; Sreedhar Natarajan; Robin Lee; Ping-Wei Wang; Shyue-Shyh Lin; Chung-Cheng Wu; et al. (ISSCC, 2013)

13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. - Yen-Huei Chen; Wei-Min Chan; Wei-Cheng Wu; Hung-Jen Liao; Kuo-Hua Pan; Jhon-Jhy Liaw; Tang-Hsuan Chung; Quincy Li; George H. Chang; Chih-Yung Lin; Mu-Chi Chiang; Shien-Yang Wu; et al. (ISSCC, 2014)