Cener for advanced electronic materials processing. - Nino A. Masnari; John R. Hauser; Gerald Lucovsky; Dennis M. Maher; Robert J. Markunas; Mehmet C. Bztork; Jimmie J. Wortman (Proc. IEEE, 1993)

Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability. - Gerald Lucovsky (IBM J. Res. Dev., 1999)

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. - Gerald Lucovsky; Gilbert B. Rayner; Robert S. Johnson (Microelectron. Reliab., 2001)

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? - Carlton M. Osburn; Indong Kim; Sungkee Han; Indranil De; Kam F. Yee; Shyam Gannavaram; Sung-Joo Lee; Chung-Ho Lee; Zhijiong J. Luo; Wenjuan Zhu 002; John R. Hauser; Dim-Lee Kwong; et al. (IBM J. Res. Dev., 2002)

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. - Gerald Lucovsky (Microelectron. Reliab., 2003)

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. - Yi-Mu Lee; Yider Wu; Gerald Lucovsky (Microelectron. Reliab., 2004)

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. - Gerald Lucovsky; J. G. Hong; Charles C. Fulton; N. A. Stoute; Y. Zou; Robert J. Nemanich; David E. Aspnes; H. Ade; D. G. Schlom (Microelectron. Reliab., 2005)

Bond strain and defects at interfaces in high-k gate stacks. - Gerald Lucovsky; James C. Phillips (Microelectron. Reliab., 2005)

Intrinsic bonding defects in transition metal elemental oxides. - Gerald Lucovsky; H. Seo; L. B. Fleming; M. D. Ulrich; J. Lüning; Patrick Lysaght; Gennadi Bersuker (Microelectron. Reliab., 2006)

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. - S. Lee; J. P. Long; Gerald Lucovsky; J. L. Whitten; H. Seo; J. Lüning (Microelectron. Reliab., 2008)