Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. - Thomas Aichinger; Gerald Rescher; Gregor Pobegen (Microelectron. Reliab., 2018)

Similarities and Differences of BTI in SiC and Si Power MOSFETs. - Judith Berens; Magdalena Weger; Gregor Pobegen; Thomas Aichinger; Gerald Rescher; Christian Schleich; Tibor Grasser (IRPS, 2020)

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. - Sebastian Maaß; Hans Reisinger; Thomas Aichinger; Gerald Rescher (IRPS, 2020)

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. - Paul Salmen; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Gerald Rescher; Thomas Aichinger (IRPS, 2021)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)