Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. - M. Fadlallah; Gérard Ghibaudo; Jalal Jomaah; M. Zoaeter (ICECS, 2000)

Failures in ultrathin oxides: Stored energy or carrier energy driven? - S. Bruyère; Frederic Monsieur; David Roy 001; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Body effect induced wear-out acceleration in ultra-thin oxides. - Sylvie Bruyère; David Roy 001; E. Robilliart; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). - Raphael Clerc; Alessandro S. Spinelli; Gérard Ghibaudo; Charles Leroux; G. Pananakakis (Microelectron. Reliab., 2001)

Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. - M. Fadlallah; Arkadiusz Szewczyk; C. Giannakopoulos; B. Cretu; Frederic Monsieur; T. Devoivre; Jalal Jomaah; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. - Sébastien Haendler; Jalal Jomaah; Gérard Ghibaudo; Francis Balestra (Microelectron. Reliab., 2001)

Stress induced leakage current at low field in ultra thin oxides. - François Lime; Gérard Ghibaudo; G. Guégan (Microelectron. Reliab., 2001)

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. - Frederic Monsieur; E. Vincent; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Direct tunnelling models for circuit simulation. - P. O'Sullivan; Raphael Clerc; Kevin G. McCarthy; Alan Mathewson; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Origin of hot carrier degradation in advanced nMOSFET devices. - B. Cretu; Francis Balestra; Gérard Ghibaudo; G. Guégan (Microelectron. Reliab., 2002)

Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. - M. Fadlallah; Gérard Ghibaudo; Jalal Jomaah; M. Zoaeter; G. Guégan (Microelectron. Reliab., 2002)

Electrical noise and RTS fluctuations in advanced CMOS devices. - Gérard Ghibaudo; T. Boutchacha (Microelectron. Reliab., 2002)

Gate oxide Reliability assessment optimization. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2002)

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. - M. Fadlallah; C. Petit; A. Meinertzhagen; Gérard Ghibaudo; M. Bidaud; O. Simonetti; F. Guyader (Microelectron. Reliab., 2003)

Guest Editorial. - Gérard Ghibaudo; E. Vincent (Microelectron. Reliab., 2003)

Charge trapping in SiO2/HfO2/TiN gate stack. - François Lime; Gérard Ghibaudo; B. Guillaumot (Microelectron. Reliab., 2003)

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. - Frederic Monsieur; E. Vincent; Vincent Huard; S. Bruyère; David Roy 001; Thomas Skotnicki; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2003)

On the SILC mechanism in MOSFET's with ultrathin oxides. - D. Bauza; F. Rahmoune; R. Laqli; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. - Emilie Deloffre; L. Montès; Gérard Ghibaudo; Sylvie Bruyère; Serge Blonkowski; Stéphane Bécu; Mickael Gros-Jean; Sébastien Crémer (Microelectron. Reliab., 2005)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. - G. Ribes; S. Bruyère; Mickael Denais; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. - Gaelle Beylier; Sylvie Bruyère; Darcy Benoit; Gérard Ghibaudo (Microelectron. Reliab., 2007)

Accurate determination of flat band voltage in advanced MOS structure. - Charles Leroux; Gérard Ghibaudo; Gilles Reimbold (Microelectron. Reliab., 2007)

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. - Gilles Reimbold; Jérôme Mitard; Xavier Garros; Charles Leroux; Gérard Ghibaudo; François Martin (Microelectron. Reliab., 2007)

Impact of silicon nitride CESL on NLDEMOS transistor reliability. - Gaelle Beylier; Sylvie Bruyère; Darcy Benoit; Gérard Ghibaudo (Microelectron. Reliab., 2008)

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. - Malick Diop; Nathalie Revil; M. Marin; Frederic Monsieur; Pascal Chevalier 002; Gérard Ghibaudo (Microelectron. Reliab., 2008)

Challenges and prospects of RF oscillators using silicon resonant tunneling diodes. - Emanuela Buccafurri; Abdelkrim Medjahdi; Françis Calmon; Raphael Clerc; Marco Pala 001; A. Poncet; Gérard Ghibaudo (ESSCIRC, 2009)

Oxide Soft Breakdown : From device modeling to small circuit simulation. - L. Gerrer; Gérard Ghibaudo; G. Ribes (ESSCIRC, 2009)

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. - L. Gerrer; M. Rafik; G. Ribes; Gérard Ghibaudo; E. Vincent (Microelectron. Reliab., 2010)

New parameter extraction method based on split C-V for FDSOI MOSFETs. - Imed Ben Akkez; Antoine Cros; Claire Fenouillet-Béranger; Frédéric Boeuf; Quentin Rafhay; Francis Balestra; Gérard Ghibaudo (ESSDERC, 2012)

Static and low frequency noise characterization of densely packed CNT-TFTs. - Min-Kyu Joo; Un Jeong Kim; Dae-Young Jeon; So Jeong Park; Mireille Mouis; Gyu-Tae Kim; Gérard Ghibaudo (ESSDERC, 2012)

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. - Masahiro Koyama; Mikaël Cassé; Remi Coquand; Sylvain Barraud; Hiroshi Iwai; Gérard Ghibaudo; Gilles Reimbold (ESSDERC, 2012)

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. - Christoforos G. Theodorou; Eleftherios G. Ioannidis; Sébastien Haendler; Nicolas Planes; Franck Arnaud; Jalal Jomaah; Charalambos A. Dimitriadis; Gérard Ghibaudo (ESSDERC, 2012)

Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. - Nikolaos Fasarakis; Andreas Tsormpatzoglou; Dimitrios H. Tassis; Konstantinos Papathanasiou; C. A. Dimitriadis; Gérard Ghibaudo (ICECS, 2012)

Analytical modeling of parasitics in monolithically integrated 3D inverters. - Joris Lacord; Perrine Batude; Gérard Ghibaudo; Frédéric Boeuf (ICICDT, 2012)

Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. - Laurent Negre; David Roy 001; Florian Cacho; Patrick Scheer; Sebastien Jan; Samuel Boret; Daniel Gloria; Gérard Ghibaudo (IEEE J. Solid State Circuits, 2012)

Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. - Remi Coquand; Sylvain Barraud; Mikaël Cassé; Masahiro Koyama; Virginie Maffini-Alvaro; Marie-Pierre Samson; Lucie Tosti; Xavier Mescot; Gérard Ghibaudo; Stéphane Monfray; Frédéric Boeuf; Olivier Faynot; et al. (ESSDERC, 2013)

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. - Masahiro Koyama; Mikaël Cassé; Remi Coquand; Sylvain Barraud; Gérard Ghibaudo; Hiroshi Iwai; Gilles Reimbold (ESSDERC, 2013)

Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI. - Kaya Can Akyel; Lorenzo Ciampolini; Olivier Thomas; Bertrand Pelloux-Prayer; Shishir Kumar; Philippe Flatresse; Christophe Lecocq; Gérard Ghibaudo (ISCAS, 2013)

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. - Kaya Can Akyel; Lorenzo Ciampolini; Olivier Thomas; David Turgis; Gérard Ghibaudo (ESSDERC, 2014)

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. - Gaspard Hiblot; Quentin Rafhay; Frédéric Boeuf; Gérard Ghibaudo (ESSDERC, 2014)

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. - Eleftherios G. Ioannidis; Sébastien Haendler; Christoforos G. Theodorou; Nicolas Planes; Charalabos A. Dimitriadis; Gérard Ghibaudo (ESSDERC, 2014)

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. - Frederic Monsieur; Yvan Denis; Denis Rideau; Vincent Quenette; Gilles Gouget; Clément Tavernier; Hervé Jaouen; Gérard Ghibaudo; Joris Lacord (ESSDERC, 2014)

Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. - Omar Jonani Franco Piliado; Giancarlo Castaneda; Andre Juge; Gérard Ghibaudo (J. Low Power Electron., 2014)

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. - Gaspard Hiblot; Quentin Rafhay; Loic Gaben; Gérard Ghibaudo; Frédéric Boeuf (ESSDERC, 2015)

Low-frequency noise in bare SOI wafers: Experiments and model. - Luca Pirro; Irina Ionica; Sorin Cristoloveanu; Gérard Ghibaudo (ESSDERC, 2015)

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. - Carlos Suarez-Segovia; Charles Leroux; Florian Domengie; Karen Dabertrand; Vincent Joseph; Giovanni Romano 003; Pierre Caubet; Stephane Zoll; Olivier Weber; Gérard Ghibaudo; Gilles Reimbold; Michel Haond (ESSDERC, 2015)

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. - A. Bezza; M. Rafik; David Roy 001; X. Federspiel; P. Mora; Cheikh Diouf; Vincent Huard; Gérard Ghibaudo (IRPS, 2015)

Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. - Sarra Souiki-Figuigui; Veronique Sousa; Gérard Ghibaudo; Gabriele Navarro; Martin Coué; Luca Perniola; P. Zuliani; Roberto Annunziata (IRPS, 2015)

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. - Christoforos G. Theodorou; Eleftherios G. Ioannidis; Sébastien Haendler; Nicolas Planes; Emmanuel Josse; Charalambos A. Dimitriadis; Gérard Ghibaudo (IRPS, 2015)

On the impact of OxRAM-based synapses variability on convolutional neural networks performance. - Daniele Garbin; Elisa Vianello; Olivier Bichler; M. Azzaz; Quentin Rafhay; Philippe Candelier; Christian Gamrat; Gérard Ghibaudo; Barbara De Salvo; Luca Perniola (NANOARCH, 2015)

Impact of short-channel effects on velocity overshoot in MOSFET. - Gaspard Hiblot; Quentin Rafhay; Frédéric Boeuf; Gérard Ghibaudo (NEWCAS, 2015)

Physically-based extraction methodology for accurate MOSFET degradation assessment. - Giulio Torrente; Jean Coignus; Sophie Renard; Alexandre Vernhet; Gilles Reimbold; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2015)

Electrical characterization of FDSOI CMOS devices. - Gérard Ghibaudo (ESSDERC, 2016)

Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. - R. Lavieville; Theano A. Karatsori; Christoforos G. Theodorou; Sylvain Barraud; C. A. Dimitriadis; Gérard Ghibaudo (ESSDERC, 2016)

Noise-induced dynamic variability in nano-scale CMOS SRAM cells. - Christoforos G. Theodorou; Mouenes Fadlallah; Xavier Garros; Charalambos A. Dimitriadis; Gérard Ghibaudo (ESSDERC, 2016)

RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. - Joseph Nguyen; David Turgis; David Bonciani; Brice Lhomme; Yann Carminati; Olivier Callen; Guillaume Guirleo; Lorenzo Ciampolini; Gérard Ghibaudo (NATW, 2016)

Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. - Ioannis Messaris; Theano A. Karatsori; Nikolaos Fasarakis; Christoforos G. Theodorou; Spiros Nikolaidis 001; Gérard Ghibaudo; C. A. Dimitriadis (Microelectron. Reliab., 2016)

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. - Jessy Micout; Quentin Rafhay; Xavier Garros; Mikaël Cassé; Jean Coignus; Luca Pasini; Cao-Minh Vincent Lu; Nils Rambal; Claire Fenouillet-Béranger; Laurent Brunet; G. Romano; R. Gassilloud; et al. (ESSDERC, 2017)

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. - Giulio Torrente; Jean Coignus; Alexandre Vernhet; Jean-Luc Ogier; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2017)

Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator. - Theano A. Karatsori; K. Bennamane; Christoforos G. Theodorou; L. Czornomaz; Jean Fompeyrine; Cezar B. Zota; Clarissa Convertino; Gérard Ghibaudo (ESSDERC, 2018)

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. - Krishna Pradeep; Theano A. Karatsori; Thierry Poiroux; Andre Juge; Patrick Scheer; Gilles Gouget; Emmanuel Josse; Gérard Ghibaudo (ESSDERC, 2018)

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). - Antoine Laurent; Xavier Garros; Sylvain Barraud; J. Pelloux-Prayer; Mikaël Cassé; Fred Gaillard; X. Federspiel; David Roy 001; E. Vincent; Gérard Ghibaudo (IRPS, 2018)

Study of forward AC stress degradation of GaN-on-Si Schottky diodes. - Thomas Lorin; William Vandendaele; Romain Gwoziecki; Charlotte Gillot; Jérome Biscarrat; Gérard Ghibaudo; Fred Gaillard (Microelectron. Reliab., 2018)

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. - D. Nouguier; X. Federspiel; Gérard Ghibaudo; M. Rafik; David Roy 001 (Microelectron. Reliab., 2018)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. - Roméo Kom Kammeugne; Charles Leroux; Tadeu Mota Frutuoso; Jacques Cluzel; Laura Vauche; Cyrille Le Royer; Romain Gwoziecki; Xavier Garros; Fred Gaillard; Matthew Charles; Edwige Bano; Gérard Ghibaudo (ESSDERC, 2021)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits. - Angeliki Tataridou; Gérard Ghibaudo; Christoforos G. Theodorou (ESSDERC, 2021)

"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs. - Angeliki Tataridou; Gérard Ghibaudo; Christoforos G. Theodorou (IRPS, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. - F. Serra Di Santa Maria; Christoforos G. Theodorou; Francis Balestra; Gérard Ghibaudo; Eunjung Cha; Cezar B. Zota (ESSDERC, 2022)

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. - F. Serra Di Santa Maria; Francis Balestra; Christoforos G. Theodorou; Gérard Ghibaudo; Cezar B. Zota; Eunjung Cha (IRPS, 2023)