Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. - Nabil Sghaier; M'Hamed Trabelsi; Noureddine Yacoubi; Jean-Marie Bluet; Abdelkader Souifi; Gérard Guillot; Christophe Gaquière; J. C. DeJaeger (Microelectron. J., 2006)

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. - Malek Gassoumi; Jean-Marie Bluet; Christophe Gaquière; Gérard Guillot; Hassen Maaref (Microelectron. J., 2009)