Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. - Laurent Jalabert; Pierre Temple-Boyer; Gérard Sarrabayrouse; F. Cristiano; B. Colombeau; F. Voillot; C. Armand (Microelectron. Reliab., 2001)

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. - Nicolas Guitard; David Trémouilles; Marise Bafleur; Laurent Escotte; Laurent Bary; Philippe Perdu; Gérard Sarrabayrouse; Nicolas Nolhier; Roberto Reyna-Rojas (Microelectron. Reliab., 2004)

Characterisation of P floating islands for 150-200 V FLYMOSFETs. - Yann Weber; Jaume Roig; Jean-Michel Reynes; Frederic Morancho; Evgueniy N. Stefanov; Monique Dilhan; Gérard Sarrabayrouse (IET Circuits Devices Syst., 2007)

Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions. - Thomas Noulis; Stylianos Siskos; Gérard Sarrabayrouse (Microelectron. Reliab., 2007)

Noise optimised charge-sensitive CMOS amplifier for capacitive radiation detectors. - Thomas Noulis; Stylianos Siskos; Gérard Sarrabayrouse (IET Circuits Devices Syst., 2008)

Analysis and selection criteria of BSIM4 flicker noise simulation models. - Thomas Noulis; Stilianos Siskos; Gérard Sarrabayrouse (Int. J. Circuit Theory Appl., 2008)

Advanced Low-Noise X-Ray Readout ASIC for Radiation Sensor Interfaces. - Thomas Noulis; Stylianos Siskos; Gérard Sarrabayrouse; Laurent Bary (IEEE Trans. Circuits Syst. I Regul. Pap., 2008)