A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions. - Gerhard G. Fischer; Grazia Sasso (Microelectron. Reliab., 2015)

High Performance Electronic Design Education - from Technology towards High Frequency Chip Sets. - Andreas Mai; Philipp Scholz; Gerhard G. Fischer; Friedel Gerfers (FIE, 2019)

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. - Christoph Weimer; Paulius Sakalas; Markus Müller; Gerhard G. Fischer; Michael Schröter (BCICTS, 2021)

Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. - Christoph Weimer; Xiaodi Jin; Gerhard G. Fischer; Michael Schröter (BCICTS, 2022)