When do we need non-quasistatic CMOS RF-models? - Elmar Gondro; Oskar Kowarik; Gerhard Knoblinger; Peter Klein (CICC, 2001)

A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design. - Gerhard Knoblinger; Peter Klein; Marc Tiebout (IEEE J. Solid State Circuits, 2001)

Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs. - Rainer Kraus; Gerhard Knoblinger (CICC, 2002)

Dielectric absorption of low-k materials: extraction, modelling and influence on SAR ADCs. - Michael Kropfitsch; Philipp Riess; Gerhard Knoblinger; Dieter Draxelmayr (ISCAS, 2006)

Circuit design issues in multi-gate FET CMOS technologies. - Christian Pacha; Klaus von Arnim; Thomas Schulz; Weize Xiong; Michael Gostkowski; Gerhard Knoblinger; Andrew Marshall; Thomas Nirschl; Jörg Berthold; Christian Russ; Harald Gossner; Charvaka Duvvury; et al. (ISSCC, 2006)

Analog design challenges and trade-offs using emerging materials and devices. - Michael Fulde; Abdelkarim Mercha; Cedric Gustin; Bertrand Parvais; Vaidyanathan Subramanian; Klaus von Arnim; Florian Bauer; Klaus Schruefer; Doris Schmitt-Landsiedel; Gerhard Knoblinger (ESSCIRC, 2007)

Advances in Multi-Gate MOSFET Circuit Design. - Michael Fulde; Klaus von Arnim; Christian Pacha; Florian Bauer; Christian Russ; Domagoj Siprak; Wade Xiong; Andrew Marshall; C. Rinn Cleavelin; Klaus Schruefer; Doris Schmitt-Landsiedel; Gerhard Knoblinger (ICECS, 2007)

Transient Variations in Emerging SOI Technologies: Modeling and Impact on Analog/Mixed-Signal Circuits. - Michael Fulde; Doris Schmitt-Landsiedel; Gerhard Knoblinger (ISCAS, 2007)

Multi-Gate MOSFET Design. - Gerhard Knoblinger (ISQED, 2007)

SUB-45nm Technology and Design Challenges. - Gerhard Knoblinger; James W. Tschanz; Marcal Pol (ISQED, 2007)

A merged MuGFET and planar SOI process. - Andrew Marshall; C. Rinn Cleavelin; Weize Xiong; Christian Pacha; Gerhard Knoblinger; Klaus Von Armin; Thomas Schulz; Klaus Schruefer; Ken Matthews; Wolfgang Molzer; Paul Patruno; Christian Russ (SoCC, 2007)

Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET. - Davide Ponton; Pierpaolo Palestri; David Esseni; Luca Selmi; Marc Tiebout; Bertrand Parvais; Gerhard Knoblinger (ISCAS, 2008)

Assessment of the impact of technology scaling on the performance of LC-VCOs. - Davide Ponton; Gerhard Knoblinger; Andreas Roithmeier; Marc Tiebout; Michael Fulde; Pierpaolo Palestri (ESSCIRC, 2009)

Design of Low-Voltage Bandgap Reference Circuits in Multi-Gate CMOS Technologies. - Michael Fulde; Martin Wirnshofer; Gerhard Knoblinger; Doris Schmitt-Landsiedel (ISCAS, 2009)

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices. - Davide Ponton; Pierpaolo Palestri; David Esseni; Luca Selmi; Marc Tiebout; Bertrand Parvais; Domagoj Siprak; Gerhard Knoblinger (IEEE Trans. Circuits Syst. I Regul. Pap., 2009)

LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology. - Davide Ponton; Gerhard Knoblinger; Andreas Roithmeier; Federico Cernoia; Marc Tiebout; Michael Fulde; Pierpaolo Palestri (IEEE Trans. Circuits Syst. II Express Briefs, 2011)

Switched state-space model for a switched-capacitor power amplifier. - Stefan Trampitsch; Gerhard Knoblinger; Mario Huemer (ISCAS, 2015)

Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs. - Antonio Passamani; Davide Ponton; Gerhard Knoblinger; Andrea Bevilacqua (NORCAS, 2015)

13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE. - Antonio Passamani; Davide Ponton; Edwin Thaller; Gerhard Knoblinger; Andrea Neviani; Andrea Bevilacqua (ISSCC, 2017)

A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm2 Area w/ 2D Digital-Pre-Distortion and Package Combiner. - Antonio Passamani; Davide Ponton; Andreas Wolter; Gerhard Knoblinger; Andrea Bevilacqua (ICECS, 2018)

A 12-b 16-GS/s RF-Sampling Capacitive DAC for Multi-Band Soft Radio Base-Station Applications With On-Chip Transmission-Line Matching Network in 16-nm FinFET. - Daniel Gruber; Martin Clara; Ramón Sanchez-Perez; Yu-shan Wang; Christoph Duller; Gerald Rauter; Patrick Torta; Gerhard Knoblinger; Kamran Azadet (IEEE J. Solid State Circuits, 2021)