Characterization and modeling of charge trapping: From single defects to devices. - Tibor Grasser; Gerhard Rzepa; Michael Waltl; Wolfgang Goes; Karina Rott; Gunnar Andreas Rott; Hans Reisinger; Jacopo Franco; Ben Kaczer (ICICDT, 2014)

The defect-centric perspective of device and circuit reliability - From individual defects to circuits. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Erik Bury; Moonju Cho; Robin Degraeve; Dimitri Linten; Guido Groeseneken; Halil Kukner; Praveen Raghavan; Francky Catthoor; et al. (ESSDERC, 2015)

Characterization and modeling of reliability issues in nanoscale devices. - Gerhard Rzepa; Wolfgang Goes; Ben Kaczer; Tibor Grasser (ISCAS, 2015)

Physical modeling of the hysteresis in M0S2 transistors. - Theresia Knobloch; Gerhard Rzepa; Yury Yu. Illarionov; Michael Waltl; Franz Schanovsky; Markus Jech; Bernhard Stampfer; Marco M. Furchi; Thomas Muller; Tibor Grasser (ESSDERC, 2017)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. - Tibor Grasser; Bernhard Stampfer; Michael Waltl; Gerhard Rzepa; Karl Rupp; Franz Schanovsky; Gregor Pobegen; Katja Puschkarsky; Hans Reisinger; Barry J. O'Sullivan; Ben Kaczer (IRPS, 2018)

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. - Wolfgang Goes; Yannick Wimmer; Al-Moatasem El-Sayed; Gerhard Rzepa; Markus Jech; Alexander L. Shluger; Tibor Grasser (Microelectron. Reliab., 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Comphy - A compact-physics framework for unified modeling of BTI. - Gerhard Rzepa; Jacopo Franco; Barry J. O'Sullivan; A. Subirats; Marko Simicic; Geert Hellings; Pieter Weckx; Markus Jech; Theresia Knobloch; Michael Waltl; Philippe Roussel; Dimitri Linten; et al. (Microelectron. Reliab., 2018)

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. - Barry J. O'Sullivan; Romain Ritzenthaler; Gerhard Rzepa; Z. Wu; E. Dentoni Litta; O. Richard; T. Conard; V. Machkaoutsan; Pierre Fazan; C. Kim; Jacopo Franco; Ben Kaczer; et al. (IRPS, 2019)

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. - Zhicheng Wu; Jacopo Franco; Dieter Claes; Gerhard Rzepa; Philippe J. Roussel; Nadine Collaert; Guido Groeseneken; Dimitri Linten; Tibor Grasser; Ben Kaczer (IRPS, 2019)

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. - Tibor Grasser; Ben Kaczer; Barry J. O'Sullivan; Gerhard Rzepa; Bernhard Stampfer; Michael Waltl (IRPS, 2020)

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. - Jakob Michl; Alexander Grill; Dieter Claes; Gerhard Rzepa; Ben Kaczer; Dimitri Linten; Iuliana P. Radu; Tibor Grasser; Michael Waltl (IRPS, 2020)

1.5-nm Node Surrounding Gate Transistor (SGT)-SRAM Cell with Staggered Pillar and Self-Aligned Process for Gate, Bottom Contact, and Pillar. - Yisuo Li; Ken'ichi Kanazawa; Tetsuo Izawa; Koji Sakui; Georg Strof; Oskar Baumgartner; Gerhard Rzepa; Markus Karner; Zlatan Stanojevic; Nozomu Harada; Fujio Masuoka (IMW, 2021)

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. - Franz Schanovsky; Devin Verreck; Antonio Arreghini; Gerhard Rzepa; Zlatan Stanojevic; Christian Kernstock; Oskar Baumgartner; Maarten Rosmeulen; Markus Karner (IMW, 2021)

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. - Gerhard Rzepa; Markus Karner; Oskar Baumgartner; Georg Strof; Franz Schanovsky; Ferdinand Mitterbauer; Christian Kernstock; Hui-Wen Karner; Pieter Weckx; Geert Hellings; Dieter Claes; Zhicheng Wu; et al. (IRPS, 2021)

Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology. - Gautam Gaddemane; Krishna K. Bhuwalka; Philippe Matagne; Gerhard Rzepa; Maarten L. Van De Put; Sybren Santermans; Oskar Baumgartner; Hao Wu; Geert Hellings (ESSDERC, 2022)

TCAD for Circuits and Systems: Process Emulation, Parasitics Extraction, Self-Heating. - Zlatan Stanojevic; Xaver Klemenschits; Gerhard Rzepa; Ferdinand Mitterbauer; Christian Schleich; Franz Schanovsky; Oskar Baumgartner; Markus Karner (BCICTS, 2024)