Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. - Fabian Horst; Michael Graef; Fabian Hosenfeld; Atieh Farokhnejad; Franziska Hain; Gia Vinh Luong; Qing-Tai Zhao; Benjamín Iñíguez; Alexander Kloes (ESSDERC, 2016)

Si n-TFETs on ultra thin body with suppressed ambipolarity. - Chang Liu; Qinghua Han; Gia Vinh Luong; Keyvan Narimani; Stefan Glass; Andreas T. Tiedemann; Stefan Trellenkamp; Wenjie Yu; Xi Wang; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2016)

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. - Gia Vinh Luong; Sebastiano Strangio; Andreas T. Tiedemann; Patric Bernardy; Stefan Trellenkamp; Pierpaolo Palestri; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)