Simulation of three-dimensional nanoelectronic devices. - Gianluca Fiori (2005)

Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors. - Xuebei Yang; Gianluca Fiori; Giuseppe Iannaccone; Kartik Mohanram (ACM Great Lakes Symposium on VLSI, 2010)

A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation. - Ying-Yu Chen; Artem Rogachev; Amit Sangai; Giuseppe Iannaccone; Gianluca Fiori; Deming Chen (DATE, 2013)

Multiscale Modeling for Graphene-Based Nanoscale Transistors. - Gianluca Fiori; Giuseppe Iannaccone (Proc. IEEE, 2013)

Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective. - Tarun Agarwal; Iuliana P. Radu; Praveen Raghavan; Gianluca Fiori; Aaron Thean; Marc M. Heyns; Wim Dehaene (ESSCIRC, 2016)

Material selection and device design guidelines for two-dimensional materials based TFETs. - Tarun Agarwal; Bart Soree; Iuliana P. Radu; Praveen Raghavan; Gianluca Fiori; Marc M. Heyns; Wim Dehaene (ESSDERC, 2017)

Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs. - Luca Sayadi; Giuseppe Iannaccone; Sebastien Sicre; Simone Lavanga; Gianluca Fiori; Oliver Haeberlen; Gilberto Curatola (ESSDERC, 2018)

MoS2/graphene Lateral Heterostructure Field Effect Transistors. - Daniel S. Schneider 001; Eros Reato; Leonardo Lucchesi; Zhenyu Wang; Agata Piacetini; Jens Bolten; Damiano Marian; Enrique G. Marin; Aleksandra Radenovic; Zhenxing Wang; Gianluca Fiori; Andras Kis; et al. (DRC, 2021)

Electric-field controlled spin transport in bilayer CrI3. - Damiano Marian; David Soriano; Enrique G. Marin; Giuseppe Iannaccone; Gianluca Fiori (ESSDERC, 2021)