RTS noise reduction of 1Y-nm floating gate NAND flash memory using process optimization. - Sungho Kim; Myeongwon Lee; Gil-Bok Choi; Jaekwan Lee; Yunbong Lee; Myoungkwan Cho; Kunok Ahn; Jinwoong Kim (IRPS, 2015)

Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. - Changbeom Woo; Shinkeun Kim; Jaeyeol Park; Hyungcheol Shin; Haesoo Kim; Gil-Bok Choi; Moon-Sik Seo; Keum Hwan Noh (IRPS, 2020)