Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. - Gerald Lucovsky; Gilbert B. Rayner; Robert S. Johnson (Microelectron. Reliab., 2001)

On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET. - Khandker Akif Aabrar; Hyeonwoo Park; Sharadindu Gopal Kirtania; Eknath Sarkar; Md Abdullah Al Mamun; Sunbin Deng; Chengyang Zhang; Gilbert B. Rayner; Kyeongjae Cho; Suman Datta (VLSI Technology and Circuits, 2024)