The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. - Frederic Monsieur; Yvan Denis; Denis Rideau; Vincent Quenette; Gilles Gouget; Clément Tavernier; Hervé Jaouen; Gérard Ghibaudo; Joris Lacord (ESSDERC, 2014)

Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. - Giacomo Garegnani; Vincent Fiori; Gilles Gouget; Frederic Monsieur; Clément Tavernier (Microelectron. Reliab., 2016)

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. - Krishna Pradeep; Theano A. Karatsori; Thierry Poiroux; Andre Juge; Patrick Scheer; Gilles Gouget; Emmanuel Josse; Gérard Ghibaudo (ESSDERC, 2018)

A self-sustaining Single Photon Avalanche Diode Model. - Sven Rink; V. Quenette; Jean-Robert Manouvrier; Andre Juge; Gilles Gouget; Denis Rideau; R. A. Bianchi; Dominique Golanski; Bastien Mamdy; Jean-Baptiste Kammerer; Wilfried Uhring; Christophe Lallement; et al. (ESSDERC, 2022)

Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs. - Denis Rideau; Wilfried Uhring; R. A. Bianchi; Rémi Helleboid; Gabriel Mugny; Jérémy Grebot; Jean-Robert Manouvrier; R. Neri; F. Brun; Mohammadreza Dolatpoor Lakeh; Sven Rink; Jean-Baptiste Kammerer; et al. (ESSDERC, 2023)