Plasma charging damage mechanisms and impact on new technologies. - Gilles Reimbold; T. Poiroux (Microelectron. Reliab., 2001)

Accurate determination of flat band voltage in advanced MOS structure. - Charles Leroux; Gérard Ghibaudo; Gilles Reimbold (Microelectron. Reliab., 2007)

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. - Gilles Reimbold; Jérôme Mitard; Xavier Garros; Charles Leroux; Gérard Ghibaudo; François Martin (Microelectron. Reliab., 2007)

Process dependence of BTI reliability in advanced HK MG stacks. - Xavier Garros; Mikaël Cassé; M. Rafik; Claire Fenouillet-Béranger; Gilles Reimbold; François Martin; Claudia Wiemer; F. Boulanger (Microelectron. Reliab., 2009)

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. - Masahiro Koyama; Mikaël Cassé; Remi Coquand; Sylvain Barraud; Hiroshi Iwai; Gérard Ghibaudo; Gilles Reimbold (ESSDERC, 2012)

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. - Masahiro Koyama; Mikaël Cassé; Remi Coquand; Sylvain Barraud; Gérard Ghibaudo; Hiroshi Iwai; Gilles Reimbold (ESSDERC, 2013)

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. - Guillaume Besnard; Xavier Garros; François Andrieu; Phuong Nguyen; William van den Daele; Patrick Reynaud; Walter Schwarzenbach; Daniel Delprat; Konstantin Bourdelle; Gilles Reimbold; Sorin Cristoloveanu (ESSDERC, 2014)

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. - J. Pelloux-Prayer; Mikaël Cassé; François Triozon; Sylvain Barraud; Yann-Michel Niquet; J.-L. Rouviere; Olivier Faynot; Gilles Reimbold (ESSDERC, 2015)

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. - Carlos Suarez-Segovia; Charles Leroux; Florian Domengie; Karen Dabertrand; Vincent Joseph; Giovanni Romano 003; Pierre Caubet; Stephane Zoll; Olivier Weber; Gérard Ghibaudo; Gilles Reimbold; Michel Haond (ESSDERC, 2015)

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. - Guillaume Besnard; Xavier Garros; Alexandre Subirats; François Andrieu; X. Federspiel; M. Rafik; Walter Schwarzenbach; Gilles Reimbold; Olivier Faynot; Sorin Cristoloveanu (IRPS, 2015)

Physically-based extraction methodology for accurate MOSFET degradation assessment. - Giulio Torrente; Jean Coignus; Sophie Renard; Alexandre Vernhet; Gilles Reimbold; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2015)

Analog performance of strained SOI nanowires down to 10K. - Bruna Cardoso Paz; Marcelo Antonio Pavanello; Mikaël Cassé; Sylvain Barraud; Gilles Reimbold; Maud Vinet; Olivier Faynot (ESSDERC, 2016)

Drain current model for short-channel triple gate junctionless nanowire transistors. - Bruna Cardoso Paz; Mikaël Cassé; Sylvain Barraud; Gilles Reimbold; Olivier Faynot; F. Avila-Herrera; Antonio Cerdeira; Marcelo Antonio Pavanello (Microelectron. Reliab., 2016)

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. - William Vandendaele; Thomas Lorin; Romain Gwoziecki; Yannick Baines; Jérome Biscarrat; Marie-Anne Jaud; Charlotte Gillot; Matthew Charles; Marc Plissonnier; Gilles Reimbold (ESSDERC, 2017)

Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. - Bruna Cardoso Paz; Renan Trevisoli Doria; Mikaël Cassé; Sylvain Barraud; Gilles Reimbold; Maud Vinet; Olivier Faynot; Marcelo Antonio Pavanello (Microelectron. Reliab., 2017)

A new method for quickly evaluating reversible and permanent components of the BTI degradation. - Xavier Garros; Alexandre Subirats; Gilles Reimbold; Fred Gaillard; Cheikh Diouf; X. Federspiel; Vincent Huard; M. Rafik (IRPS, 2018)

Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. - Xavier Garros; Antoine Laurent; Alexandre Subirats; X. Federspiel; E. Vincent; Gilles Reimbold (Microelectron. Reliab., 2018)