Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4. - Sanghyun Seo; Eunjung Cho; Giorgi Aroshvili; Chong Jin; Dimitris Pavlidis; Laurence Considine (IEICE Trans. Electron., 2010)