The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations. - Giorgia Longobardi; Florin Udrea; Stephen Sque; Jeroen Croon; Fred Hurkx; Jan Sonsky (ESSDERC, 2014)

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs. - Dario Pagnano; Giorgia Longobardi; Florin Udrea; Jinming Sun; Mohamed Imam; Reenu Garg; Hyeongnam Kim; Alain Charles (Microelectron. Reliab., 2018)

GaN-on-Si Thermoresistive Flow Sensor with Gold Hot-wire. - G. Rhys Jones; Julian W. Gardner; Timothy Vincent; Andrea De Luca; Giorgia Longobardi; Abdalla Eblabla; Khaled Elgaid; Tracy Wotherspoon; Richard Birch; Florin Udrea (IEEE SENSORS, 2019)

A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit. - Loizos Efthymiou; Martin Arnold; Giorgia Longobardi; Florin Udrea (ESSDERC, 2022)