Sensitivity Analysis for Device Design. - Antonio Gnudi; Paolo Ciampolini; Roberto Guerrieri; Massimo Rudan; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1987)

A new discretization strategy of the semiconductor equations comprising momentum and energy balance. - Alessandro Forghieri; Roberto Guerrieri; Paolo Ciampolini; Antonio Gnudi; Massimo Rudan; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1988)

Adaptive mesh generation preserving the quality of the initial grid. - Paolo Ciampolini; Alessandro Forghieri; Anna Pierantoni; Antonio Gnudi; Massimo Rudan; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989)

Three-dimensional simulation of VLSI structures. - Paolo Ciampolini; Anna Pierantoni; Massimo Rudan; Giorgio Baccarani (Eur. Trans. Telecommun., 1990)

Efficient 3-D simulation of complex structures. - Paolo Ciampolini; Anna Pierantoni; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991)

A novel metric for nearest-neighbor classification of hand-written digits. - Zsolt Miklós Kovács-Vajna; Roberto Guerrieri; Giorgio Baccarani (ICPR (2), 1992)

Numerical modeling of advanced semiconductor devices. - Wai Lee; Steven E. Laux; Massimo V. Fischetti; Giorgio Baccarani; Antonio Gnudi; Johannes M. C. (Hans) Stork; Jack A. Mandelman; Emmanuel F. Crabbé; Matthew R. Wordeman; Farouk Odeh (IBM J. Res. Dev., 1992)

Random access analog memory for early vision. - Eleonora Franchi; Marco Tartagni; Roberto Guerrieri; Giorgio Baccarani (IEEE J. Solid State Circuits, 1992)

An array-processor based architecture for classification problems. - Antonella Bellettini; Alberto Ferrari; Roberto Guerrieri; Giorgio Baccarani (ASAP, 1993)

Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. - Antonio Gnudi; Davide Ventura; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993)

Hydrodynamic simulation of semiconductor devices operating at low temperature. - Alberto Leone; Antonio Gnudi; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1994)

A 2D-DCT low-power architecture for H.261 coders. - E. Scopa; Alberto Leone; Roberto Guerrieri; Giorgio Baccarani (ICASSP, 1995)

An enhanced two-level Boolean synthesis methodology for fuzzy rules minimization. - Riccardo Rovatti; Roberto Guerrieri; Giorgio Baccarani (IEEE Trans. Fuzzy Syst., 1995)

On the Structure and Closure-Condition of the Hydrodynamic Model. - Massimo Rudan; Giorgio Baccarani (VLSI Design, 1995)

Device simulation for smart integrated systems (DESSIS). - Giorgio Baccarani; Massimo Rudan; M. Lorenzini; Wolfgang Fichtner; J. Litsios; A. Schenk; P. Van Staa; L. Kaeser; A. Kampmann; A. Marmiroli; C. Sala; E. Ravanelli (ICECS, 1996)

An ASIC chip set for parallel fuzzy database mining. - Alberto Ferrari; Antonella Bellettini; Roberto Guerrieri; Giorgio Baccarani (IEEE Micro, 1996)

A silicon compiler of analog fuzzy controllers: from behavioral specifications to layout. - Nicolò Manaresi; Riccardo Rovatti; Eleonora Franchi; Roberto Guerrieri; Giorgio Baccarani (IEEE Trans. Fuzzy Syst., 1996)

Automatic synthesis of analog fuzzy controllers: a hardware and software approach. - Nicolò Manaresi; Riccardo Rovatti; Eleonora Franchi; Roberto Guerrieri; Giorgio Baccarani (IEEE Trans. Ind. Electron., 1996)

A photodiode cell for applications to position and motion estimation sensors. - Marco Tartagni; Eleonora Franchi; Roberto Guerrieri; Giorgio Baccarani (IEEE Trans. Ind. Electron., 1996)

Highly constrained neural networks for industrial quality control. - Nicola Guglielmi; Roberto Guerrieri; Giorgio Baccarani (IEEE Trans. Neural Networks, 1996)

Analog synthesis of nonlinear functions based on fuzzy logic. - Eleonora Franchi; Nicolò Manaresi; Riccardo Rovatti; Alberto Bellini; Giorgio Baccarani (IEEE J. Solid State Circuits, 1998)

Recent Advances in Device Simulation Using Standard Transport Models. - Giorgio Baccarani; Massimo Rudan; M. Lorenzini; C. Sala (VLSI Design, 1998)

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. - Susanna Reggiani; Marina Valdinoci; Luigi Colalongo; Massimo Rudan; Giorgio Baccarani (VLSI Design, 2000)

A Single-Scan Algorithm for Connected Components Labelling in a Traffic Monitoring Application. - Alessandro Bevilacqua; Alessandro Lanza; Giorgio Baccarani; Riccardo Rovatti (SCIA, 2003)

Drain-conductance optimization in nanowire TFETs. - Elena Gnani; Susanna Reggiani; Antonio Gnudi; Giorgio Baccarani (ESSDERC, 2012)

Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. - Emanuele Baravelli; Elena Gnani; Roberto Grassi; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. - Giovanni Betti Beneventi; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

DC and small-signal numerical simulation of graphene base transistor for terahertz operation. - Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Gate stack optimization to minimize power consumption in super-lattice fets. - Pasquale Maiorano; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). - Susanna Reggiani; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Marie Denison (ESSDERC, 2013)

Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. - Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (Microelectron. J., 2013)

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. - Ilaria Imperiale; Susanna Reggiani; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Luu Nguyen; Marie Denison (ESSDERC, 2014)

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. - Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2014)

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. - Federico Monti; Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Ming-Yeh Chuang; Weidong Tian; Dhanoop Varghese; Rick Wise (ESSDERC, 2014)

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. - Federica Villani; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2014)

Theoretical analyses and modeling for nanoelectronics. - Giorgio Baccarani; Emanuele Baravelli; Elena Gnani; Antonio Gnudi; Susanna Reggiani (ESSDERC, 2015)

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. - Davide Cornigli; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Giorgio Baccarani; Davide Fabiani; Dhanoop Varghese; Enis Tuncer; S. Krishnan; Luu Nguyen (Microelectron. Reliab., 2018)

TCAD study of DLC coatings for large-area high-power diodes. - Susanna Reggiani; Luigi Balestra; Antonio Gnudi; Elena Gnani; Giorgio Baccarani; J. Dobrzynska; J. Vobecký; C. Tosi (Microelectron. Reliab., 2018)