Gate-lag effects in AlGaAs/GaAs power HFET's. - Mattia Borgarino; Giovanna Sozzi; Andrea Mazzanti; Giovanni Verzellesi (Microelectron. Reliab., 2001)

High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study. - Giovanna Sozzi; Roberto Menozzi (Microelectron. Reliab., 2002)

Temperature-dependent breakdown and hot carrier stress of PHEMTs. - Paolo Cova; Nicola Delmonte; Giovanna Sozzi; Roberto Menozzi (Microelectron. Reliab., 2004)

High reliable high power diode for welding applications. - Paolo Cova; Fioravante Fasce; Pietro Pampili; Marco Portesine; Giovanna Sozzi; Pier Enrico Zani (Microelectron. Reliab., 2004)

A review of the use of electro-thermal simulations for the analysis of heterostructure FETs. - Giovanna Sozzi; Roberto Menozzi (Microelectron. Reliab., 2007)

A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion. - D. Mari; Mirko Bernardoni; Giovanna Sozzi; Roberto Menozzi; Gilberto Antonio Umana-Membreno; Brett D. Nener (Microelectron. Reliab., 2011)

Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime. - Antonio Raffo; Sergio Di Falco; Giovanna Sozzi; Roberto Menozzi; Dominique M. M.-P. Schreurs; Giorgio Vannini (Microelectron. Reliab., 2011)

Investigating Mesa Structure Impact on C-V Measurements. - Giovanna Sozzi; Giovanni Chiorboli; Lorenzo Perini; Roberta Nipoti (IEEE Access, 2024)

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law. - Giovanna Sozzi; Sergio Sapienza; Giovanni Chiorboli; Lasse Vines; Anders Hallén; Roberta Nipoti (IEEE Access, 2024)