Electroluminescence of SixGe1-x-ySny/Ge1-ySny pin-Diodes Grown on a GeSn Buffer. - Lukas Seidel; Sören Schäfer; Michael Oehme; Dan Buca; Giovanni Capellini; Jörg Schulze; Daniel Schwarz (ESSCIRC, 2022)

Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment. - Christoph Wilflingseder; Johannes Aberl; Enrique Prado Navarrete; Guenter Hesser; Heiko Groiss; Maciej Oskar Liedke; Maik Butterling; Andreas Wagner; Eric Hirschmann; Cedric Corley-Wiciak; Marvin Zoellner; Giovanni Capellini; et al. (RODARE, 2024)