A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. - G. G. Marotta; Agostino Macerola; Andrea D'Alessandro; A. Torsi; C. Cerafogli; C. Lattaro; C. Musilli; D. Rivers; Emanuele Sirizotti; F. Paolini; G. Imondi; G. Naso; et al. (ISSCC, 2010)

A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology. - Giovanni Naso; L. Botticchio; M. Castelli; C. Cerafogli; M. Cichocki; P. Conenna; Andrea D'Alessandro; Luca De Santis; Domenico Di Cicco; W. Di Francesco; M. L. Gallese; Girolamo Gallo; et al. (ISSCC, 2013)

Diffusion-controlled reactions modeling in Geant4-DNA. - Mathieu Karamitros; S. Luan; Mario A. Bernal; J. Allison; Gérard Baldacchino; M. Davidkova; Ziad Francis; W. Friedland; Vladimir Ivanchenko; A. Ivantchenko; Alfonso Mantero; P. Nieminem; et al. (J. Comput. Phys., 2014)

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory. - Tomoharu Tanaka; Mark Helm; Tommaso Vali; Ramin Ghodsi; Koichi Kawai; Jae-Kwan Park; Shigekazu Yamada; Feng Pan; Yuichi Einaga; Ali Ghalam; Toru Tanzawa; Jason Guo; et al. (ISSCC, 2016)