DRAM reliability. - Kinam Kim; Gitae Jeong; Chan-Woong Chun; Sam-Jin Hwang (Microelectron. Reliab., 2002)

A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. - Gitae Jeong; Wooyoung Cho; Sujin Ahn; Hongsik Jeong; Gwanhyeob Koh; Youngnam Hwang; Kinam Kim (IEEE J. Solid State Circuits, 2003)

Emerging memory technologies. - Kinam Kim; Gitae Jeong; Hongsik Jeong; Sungyung Lee (CICC, 2005)

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). - Woo Yeong Cho; Beak-Hyung Cho; Byung-Gil Choi; Hyung-Rok Oh; Sangbeom Kang; Ki-Sung Kim; Kyung-Hee Kim; Du-Eung Kim; Choong-Keun Kwak; Hyun-Geun Byun; Youngnam Hwang; SuJin Ahn; et al. (IEEE J. Solid State Circuits, 2005)

Enhanced write performance of a 64-mb phase-change random access memory. - Hyung-Rok Oh; Beak-Hyung Cho; Woo Yeong Cho; Sangbeom Kang; Byung-Gil Choi; Hye-Jin Kim; Ki-Sung Kim; Du-Eung Kim; Choong-Keun Kwak; Hyun-Geun Byun; Gitae Jeong; Hong-Sik Jeong; et al. (IEEE J. Solid State Circuits, 2006)

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. - KwangJin Lee; Beak-Hyung Cho; Woo-Yeong Cho; Sangbeom Kang; Byung-Gil Choi; Hyung-Rok Oh; Changsoo Lee; Hye-Jin Kim; Joon-min Park; Qi Wang; Mu-Hui Park; Yu-Hwan Ro; et al. (ISSCC, 2007)

A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. - Sangbeom Kang; Woo Yeong Cho; Beak-Hyung Cho; KwangJin Lee; Changsoo Lee; Hyung-Rok Oh; Byung-Gil Choi; Qi Wang; Hye-Jin Kim; Mu-Hui Park; Yu-Hwan Ro; Suyeon Kim; et al. (IEEE J. Solid State Circuits, 2007)

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. - KwangJin Lee; Beak-Hyung Cho; Woo-Yeong Cho; Sangbeom Kang; Byung-Gil Choi; Hyung-Rok Oh; Changsoo Lee; Hye-Jin Kim; Joon-min Park; Qi Wang; Mu-Hui Park; Yu-Hwan Ro; et al. (IEEE J. Solid State Circuits, 2008)

Current status and future prospect of Phase Change Memory. - Byeungchul Kim; Yoon-Jong Song; Sujin Ahn; Younseon Kang; Hoon Jeong; Dongho Ahn; Seokwoo Nam; Gitae Jeong; Chilhee Chung (ASICON, 2011)

Current-voltage characteristics of vertical diodes for next generation memories. - Hokyun An; Kong-Soo Lee; Yoongoo Kang; Seonghoon Jeong; Wonseok Yoo; Jae-Jong Han; Bonghyun Kim; Hanjin Lim; Seokwoo Nam; Gi-Tae Jeong; Ho-Kyu Kang; Chilhee Chung; et al. (ESSDERC, 2012)

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. - Youngdon Choi; Ickhyun Song; Mu-Hui Park; Hoeju Chung; Sanghoan Chang; Beakhyoung Cho; Jinyoung Kim; Younghoon Oh; Dukmin Kwon; Jung Sunwoo; Junho Shin; Yoohwan Rho; et al. (ISSCC, 2012)

What Lies Ahead for Resistance-Based Memory Technologies? - Yoon-Jong Song; Gitae Jeong; In-Gyu Baek; Jungdal Choi (Computer, 2013)

Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology. - Y. Ji; H. J. Goo; J. Lim; S. B. Lee; S. Lee; Taiki Uemura; J. C. Park; S. I. Han; S. C. Shin; J. H. Lee; Y. J. Song; K. M. Lee; et al. (IRPS, 2019)

Reliability of STT-MRAM for various embedded applications. - Shinhee Han; Junghyuk Lee; Kiseok Suh; Kyungtae Nam; Daeeun Jeong; Sechung Oh; Sohee Hwang; Yongsung Ji; Kilho Lee; Kangho Lee; Yoonjong Song; Yeongki Hong; et al. (IRPS, 2021)

World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process. - Jaehun Jeong; Sanghyeon Lee; Sada-Aki Masuoka; Shincheol Min; Sanghoon Lee; Seungkwon Kim; Taehun Myung; Byungha Choi; Chang-Woo Sohn; Sung Won Kim; Jeongmin Choi; Jungmin Park; et al. (VLSI Technology and Circuits, 2023)

Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. - Kihwang Son; Seulki Park; Kyunghoon Jung; Jun-Gyu Kim; Younggun Ko; Keonyong Cheon; Changkeun Yoon; Jiho Kim; Jaehun Jeong; Taehun Myung; Changmin Hong; Weonwi Jang; et al. (VLSI Technology and Circuits, 2023)