Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology. - Venkateswarlu Gaddam; Junghyeon Hwang; Hunbeom Shin; Chaeheon Kim; Giuk Kim; Hyung-Jun Kim; Jooho Lee; Hyun-Cheol Kim; Bumsu Park; Suhwan Lim; Sang Yun Kim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling. - Giuk Kim; Hyojun Choi; Hunbeom Shin; Sangho Lee; Sangmok Lee; Yunseok Nam; Minhyun Jung; Ilho Myeong; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications. - Hyojun Choi; Giuk Kim; Hunbeom Shin; Yunseok Nam; Sanghun Jeon; Kwangsoo Kim; Suhwan Lim; Jongho Woo; Wanki Kim; Daewon Ha; Jinho Ahn (IRPS, 2025)

Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing. - Hunbeom Shin; Giuk Kim; Sujeong Lee; Geonhyeong Kang; Hyojun Choi; Taeseung Jung; Sanghun Jeon; Hyung-Jun Kim; Jinho Ahn (IRPS, 2025)