Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. - Davide Bisi; Matteo Meneghini; Antonio Stocco; Giulia Cibin; Alessio Pantellini; Antonio Nanni; Claudio Lanzieri; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2013)