Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. - Alessandro Pezzotta; C.-M. Zhang; Farzan Jazaeri; Claudio Bruschini; Giulio Borghello; Federico Faccio; S. Mattiazzo; Andrea Baschirotto; Christian C. Enz (ESSDERC, 2016)

Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. - C.-M. Zhang; Farzan Jazaeri; Alessandro Pezzotta; Claudio Bruschini; Giulio Borghello; S. Mattiazzo; Andrea Baschirotto; Christian C. Enz (ESSDERC, 2017)

Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS. - Loukas Chevas; Aristeidis Nikolaou; Matthias Bucher; Nikolaos Makris; Alexia Papadopoulou; Apostolos Zografos; Giulio Borghello; Henri D. Koch; Federico Faccio (MIXDES, 2018)

Extending a 65nm CMOS process design kit for high total ionizing dose effects. - Aristeidis Nikolaou; Matthias Bucher; Nikos Makris; Alexia Papadopoulou; Loukas Chevas; Giulio Borghello; Henri D. Koch; Kostas Kloukinas; Tuomas S. Poikela; Federico Faccio (MOCAST, 2018)

Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose. - Aristeidis Nikolaou; Loukas Chevas; Alexia Papadopoulou; Nikolaos Makris; Matthias Bucher; Giulio Borghello; Federico Faccio (MIXDES, 2019)