Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability. - Giuseppe Currò; R. Greco; Antonino Scandurra (Microelectron. Reliab., 2002)

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; Annunziata Sanseverino; A. Candelori; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2003)

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Alberto Porzio; Annunziata Sanseverino; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2004)

Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. - Giacomo Barletta; Giuseppe Currò (Microelectron. Reliab., 2005)

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. - Giovanni Busatto; Alberto Porzio; Francesco Velardi; Francesco Iannuzzo; Annunziata Sanseverino; Giuseppe Currò (Microelectron. Reliab., 2005)

Experimental study of power MOSFET's gate damage in radiation environment. - Giovanni Busatto; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi; Giuseppe Currò (Microelectron. Reliab., 2006)

Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique. - Giacomo Barletta; Giuseppe Currò (Microelectron. Reliab., 2007)

Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices. - Alessandra Cascio; Giuseppe Currò; A. Cavagnoli (Microelectron. Reliab., 2007)

Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices. - Giuseppe Currò; Marco Camalleri; Denise Calì; Francesca Monforte; Fortunato Neri (Microelectron. Reliab., 2007)

Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices. - Giuseppe Currò; Marco Camalleri; Denise Calì; Francesca Monforte; Fortunato Neri (Microelectron. Reliab., 2007)

Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate. - Francesca Monforte; Marco Camalleri; Denise Calì; Giuseppe Currò; Enza Fazio; Fortunato Neri (Microelectron. Reliab., 2007)

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2008)

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2009)

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2010)

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. - Giovanni Busatto; D. Bisello; Giuseppe Currò; Piero Giubilato; Francesco Iannuzzo; S. Mattiazzo; D. Pantano; Annunziata Sanseverino; Luca Silvestrin; M. Tessaro; Francesco Velardi; Jeffery Wyss (Microelectron. Reliab., 2011)

Avatar Surgeon, Digital Pathology and Telementoring: SICE New Technology and Training Research Group Experience. - Michele Ammendola; Giuseppe Massimiliano De Luca; Francesca Vescio; Nicola de'Angelis; Valeria Zuccalà; Andrea Balla; Umberto Bracale; Ludovica Guerriero; Giovanni Laracca; Vinicio Mosca; Domenico Spoletini; Monica Ortenzi; et al. (XR (2), 2024)