AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. - E. A. Douglas; C. Y. Chang; David J. Cheney; B. P. Gila; Chi-Fai Lo; Liu Lu; M. R. Holzworth; Patrick G. Whiting; Kevin S. Jones; Glen David Via; Jinhyung Kim; Soohwan Jang; et al. (Microelectron. Reliab., 2011)

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. - E. A. Douglas; C. Y. Chang; B. P. Gila; M. R. Holzworth; Kevin S. Jones; Lu Liu 011; Jinhyung Kim; Soohwan Jang; Glen David Via; Fan Ren; Stephen J. Pearton (Microelectron. Reliab., 2012)

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps. - A. Sasikumar; Aaron R. Arehart; Glen David Via; B. Winningham; Brian S. Poling; E. R. Heller; S. A. Ringel (Microelectron. Reliab., 2015)

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN. - Aaron R. Arehart; A. Sasikumar; Glen David Via; Brian S. Poling; E. R. Heller; S. A. Ringel (Microelectron. Reliab., 2016)

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation. - Brian S. Poling; Glen David Via; Ken D. Bole; E. E. Johnson; J. M. McDermott (Microelectron. Reliab., 2017)

A Decomposition Workflow for Integrated Circuit Verification and Validation. - Adam G. Kimura; Jon Scholl; James Schaffranek; Matthew Sutter; Andrew Elliott; Mike Strizich; Glen David Via (J. Hardw. Syst. Secur., 2020)