25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation. - Tae-Young Oh; Hoeju Chung; Young-Chul Cho; Jang-Woo Ryu; Kiwon Lee; Changyoung Lee; Jin-Il Lee; Hyoung-Joo Kim 002; Min-Soo Jang; Gong-Heum Han; Kihan Kim; Daesik Moon; et al. (ISSCC, 2014)

23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices. - Hye-Jung Kwon; Eunsung Seo; ChangYong Lee; Young-Hun Seo; Gong-Heum Han; Hye-Ran Kim; Jong-Ho Lee; Min-Su Jang; Sung-Geun Do; Seung-Hyun Cho; Jae-Koo Park; Su-Yeon Doo; et al. (ISSCC, 2017)

A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. - Young-Ju Kim 001; Hye-Jung Kwon; Su-Yeon Doo; Yoon-Joo Eom; Young-Sik Kim; Min-Su Ahn; Yong-Hun Kim; Sang-Hoon Jung; Sung-Geun Do; Chang-Yong Lee; Jae-Sung Kim; Dong-Seok Kang; et al. (ISSCC, 2018)

A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. - Young-Ju Kim 001; Hye-Jung Kwon; Su-Yeon Doo; Min-Su Ahn; Yong-Hun Kim; Yong Jae Lee; Dong-Seok Kang; Sung-Geun Do; Chang-Yong Lee; Gun-hee Cho; Jae-Koo Park; Jae-Sung Kim; et al. (IEEE J. Solid State Circuits, 2019)

Industry's First 7.2 Gbps 512GB DDR5 Module. - Sung Joo Park; Jonghoon J. Kim; Kun Joo; Young-Ho Lee; Kyoungsun Kim; Young-Tae Kim; Woo-Jin Na; IkJoon Choi; Hye-Seung Yu; Wonyoung Kim; Ju-Yeon Jung; Jaejun Lee; et al. (HCS, 2021)

A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. - Dae-Hyun Kim 003; Byungkyu Song; Hyun-A. Ahn; Woongjoon Ko; Sung-Geun Do; Seokjin Cho; Kihan Kim; Seung-Hoon Oh; Hye-Yoon Joo; Geuntae Park; Jin-Hun Jang; Yong-Hun Kim; et al. (ISSCC, 2022)