High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. - Myung-Ho Jung; Goon-Ho Park; Tomohiro Yoshida; Hirokazu Fukidome; Tetsuya Suemitsu; Taiichi Otsuji; Maki Suemitsu (Proc. IEEE, 2013)