Two CMOS Metastability Sensors. - Greg G. Freeman; Dick L. Liu; Bruce A. Wooley; Edward J. McCluskey (ITC, 1986)

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs. - K. M. Walter; B. Ebersman; D. A. Sunderland; G. D. Berg; Greg G. Freeman; Robert A. Groves; D. K. Jadus; David L. Harame (IEEE J. Solid State Circuits, 1998)

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. - Seshadri Subbanna; Lawrence Larson; Greg G. Freeman; David Ahlgren; Kenneth J. Stein; Carl E. Dickey; James Mecke; A. Rincon; P. Bacon; Robert A. Groves; Mehmet Soyuer; David L. Harame; et al. (CICC, 2001)

40-Gb/s circuits built from a 120-GHz fT SiGe technology. - Greg G. Freeman; Mounir Meghelli; Young Kwark; Steven Zier; Alexander V. Rylyakov; Michael Sorna; Todd Tanji; Oswin M. Schreiber; Keith Walter; Jae-Sung Rieh; Basanth Jagannathan; Alvin J. Joseph; et al. (IEEE J. Solid State Circuits, 2002)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Product applications and technology directions with SiGe BiCMOS. - Alvin J. Joseph; James S. Dunn; Greg G. Freeman; David L. Harame; Douglas Coolbaugh; Robert A. Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; et al. (IEEE J. Solid State Circuits, 2003)

RFCMOS technology from 0.25μm to 65nm: the state of the art. - John J. Pekarik; David R. Greenberg; Basanth Jagannathan; Robert A. Groves; J. R. Jones; Raminderpal Singh; Anil Chinthakindi; Xudong Wang; Matthew J. Breitwisch; Douglas D. Coolbaugh; Peter E. Cottrell; John E. Florkey; et al. (CICC, 2004)

Reliability and performance scaling of very high speed SiGe HBTs. - Greg G. Freeman; Jae-Sung Rieh; Zhijian Yang; Fernando J. Guarín (Microelectron. Reliab., 2004)

Scaling of SiGe Heterojunction Bipolar Transistors. - Jae-Sung Rieh; David R. Greenberg; Andreas Stricker; Greg G. Freeman (Proc. IEEE, 2005)

45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications. - Subramanian S. Iyer; Greg G. Freeman; Colin Brodsky; Anthony I. Chou; Dan Corliss; Sameer H. Jain; Naftali E. Lustig; Vincent McGahay; Shreesh Narasimha; James P. Norum; Karen A. Nummy; Paul C. Parries; et al. (IBM J. Res. Dev., 2011)