0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. - Grégory Avenier; Malick Diop; Pascal Chevalier 002; Germaine Troillard; Nicolas Loubet; Julien Bouvier; Linda Depoyan; Nicolas Derrier; Michel Buczko; Cédric Leyris; Samuel Boret; Sébastien Montusclat; et al. (IEEE J. Solid State Circuits, 2009)

SiGe BiCMOS Current Status and Future Trends in Europe. - Pascal Chevalier 002; Wolfgang Liebl; Holger Rücker; Alexis Gauthier; Dirk Manger; Bernd Heinemann; Grégory Avenier; Josef Böck (BCICTS, 2018)

450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. - Alexis Gauthier; Julien Borrel; Pascal Chevalier 002; Grégory Avenier; A. Montagné; M. Juhel; R. Duru; L.-R. Clément; C. Borowiak; Michel Buczko; Christophe Gaquière (BCICTS, 2018)

Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications. - Vincent Gidel; Frédéric Gianesello; Pascal Chevalier 002; Grégory Avenier; Nicolas Guitard; Michel Buczko; Cyril Luxey; Guillaume Ducournau (RWS, 2020)