Si-Ge interdiffusion and its impacts on enhanced mobility metal oxide semiconductor field-effect transistors. - Guangrui Xia (2006)

The dependency of TSV keep-out zone (KOZ) on Si crystal direction and liner material. - Jiye Zhang; Lin Zhang; Yuanwei Dong; Hongyu Li; Cher Ming Tan; Guangrui Xia; Chuan Seng Tan (3DIC, 2013)

Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices. - Guangrui Xia (ESSDERC, 2017)