Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. - Peicheng Li; Guanghui Mei; Guangxi Hu; Ran Liu 001; Tingao Tang (ASICON, 2011)

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. - Guanghui Mei; Peicheng Li; Guangxi Hu; Ran Liu 001; Tingao Tang (ASICON, 2011)

An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs. - Zhihao Ding; Guangxi Hu; Jinglun Gu; Ran Liu 001; Lingli Wang; Tingao Tang (Microelectron. J., 2011)

Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. - Peicheng Li; Guangxi Hu; Ran Liu 001; Tingao Tang (Microelectron. J., 2011)

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs. - Guanghui Mei; Peicheng Li; Guangxi Hu; Ran Liu 001; Lingli Wang; Tingao Tang (Microelectron. J., 2012)

Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET. - Ping Xiang; Zhihao Ding; Guangxi Hu; Hui Chol Ri; Ran Liu 001; Lingli Wang; Xing Zhou (ASICON, 2013)

Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs. - Guangxi Hu; Shuyan Hu; Jianhua Feng; Ran Liu 001; Lingli Wang; Li-Rong Zheng 001 (ASICON, 2015)

Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. - Guangxi Hu; Shuyan Hu; Jianhua Feng; Ran Liu 001; Lingli Wang; Li-Rong Zheng 001 (Microelectron. J., 2016)

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. - Haisheng Qian; Guangxi Hu; Laigui Hu; Xing Zhou; Ran Liu 001; Li-Rong Zheng 001 (ASICON, 2017)

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance. - Jiarui Bao; Shuyan Hu; Guangxi Hu; Laigui Hu; Ran Liu 001; Lirong Zheng 001 (ASICON, 2019)

Hand Gesture Recognition Using IR-UWB Radar with Spiking Neural Networks. - Wang Shule; Yulong Yan; Haoming Chu; Guangxi Hu; Zhi Zhang; Zhuo Zou; Lirong Zheng 001 (AICAS, 2022)

Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. - Guodong Qi; Xinyu Chen; Guangxi Hu; Peng Zhou; Wenzhong Bao; Ye Lu (Sci. China Inf. Sci., 2023)

Comprehensive Modeling and Investigation of Intrinsic Variation Source Fluctuation in 2D-Layered Thin Film Transistors. - Tao Du; Wei Zhang; Xuanyao Fong; Guangxi Hu; Peng Zhou; Ye Lu (IRPS, 2025)

An efficient surface-potential-based compact model for dynamically depleted silicon-on-insulator MOSFETs. - Tianye Yu; Gongteng Xiao; Yudi Zhao; Guangxi Hu; Hongtao Xu; Ye Lu (Microelectron. J., 2025)