Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec. - Kaifei Chen; Jiebin Niu; Guanhua Yang; Menggan Liu; Wendong Lu; Fuxi Liao; Kailiang Huang; Xinlv Duan; Congyan Lu; Jiawei Wang; Lingfei Wang; Mengmeng Li; et al. (VLSI Technology and Circuits, 2022)

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. - Kailiang Huang; Xinlv Duan; Junxiao Feng; Ying Sun; Congyan Lu; Chuanke Chen; Guangfan Jiao; Xinpeng Lin; Jinhai Shao; Shihui Yin; Jiazhen Sheng; Zhaogui Wang; et al. (VLSI Technology and Circuits, 2022)

IG-CRM: Area/Energy-Efficient IGZO-Based Circuits and Architecture Design for Reconfigurable CIM/CAM Applications. - Zeyu Guo 002; Jinshan Yue; Shengzhe Yan; Zhuoyu Dai; Xiangqu Fu; Zhaori Cong; Zening Niu; Ke Hu; Lihua Xu; Jiawei Wang; Lingfei Wang; Guanhua Yang; et al. (DAC, 2024)

First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s). - Menggan Liu; Zhi Li 062; Wendong Lu; Kaifei Chen; Jiebin Niu; Fuxi Liao; Zijing Wu; Congyan Lu; Weizeng Li; Di Geng; Nianduan Lu; Chunmeng Dou; et al. (VLSI Technology and Circuits, 2024)

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs. - Jiayi Wang; Ziheng Bai; Kuo Zhang; Zhicheng Wu; Di Geng; Yang Xu; Nannan You; Yuxuan Li; Guanhua Yang; Ling Li 013; Shengkai Wang; Ming Liu 022 (VLSI Technology and Circuits, 2024)

Binary-Stochasticity-Enabled Highly Efficient Neuromorphic Deep Learning Achieves Better-than-Software Accuracy. - Yang Li 203; Wei Wang 209; Ming Wang; Chunmeng Dou; Zhengyu Ma; Huihui Zhou; Peng Zhang 077; Nicola Lepri; Xumeng Zhang; Qing Luo; Xiaoxin Xu; Guanhua Yang; et al. (Adv. Intell. Syst., 2024)

A Multichiplet Computing-in-Memory Architecture Exploration Framework Based on Various CIM Devices. - Zhuoyu Dai; Feibin Xiang; Xiangqu Fu; Yifan He 003; Wenyu Sun; Yongpan Liu; Guanhua Yang; Feng Zhang 014; Jinshan Yue; Ling Li 013 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2024)

A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. - Shengzhe Yan; Zhaori Cong; Zi Wang; Zhuoyu Dai; Zeyu Guo 002; Zhihang Qian; Xufan Li; Xu Zheng; Chuanke Chen; Nianduan Lu; Chunmeng Dou; Guanhua Yang; et al. (Sci. China Inf. Sci., 2025)