Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. - Guillaume Besnard; Xavier Garros; François Andrieu; Phuong Nguyen; William van den Daele; Patrick Reynaud; Walter Schwarzenbach; Daniel Delprat; Konstantin Bourdelle; Gilles Reimbold; Sorin Cristoloveanu (ESSDERC, 2014)

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. - Guillaume Besnard; Xavier Garros; Alexandre Subirats; François Andrieu; X. Federspiel; M. Rafik; Walter Schwarzenbach; Gilles Reimbold; Olivier Faynot; Sorin Cristoloveanu (IRPS, 2015)

Low Temperature SmartCutTM enables High Density 3D SoC Applications. - Walter Schwarzenbach; Bich-Yen Nguyen; Guillaume Besnard (ICICDT, 2019)

Smart Cut™ technology: from Substrate Enginnering to Advanced 3D Integration. - Guillaume Besnard; Bich-Yen Nguyen; Christophe Maleville (ICICDT, 2022)

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections. - A. Vandooren; N. Parihar; Jacopo Franco; Roger Loo; Hiroaki Arimura; R. Rodriguez; F. Sebaai; S. Iacovo; Kevin Vandersmissen; W. Li; G. Mannaert; D. Radisic; et al. (VLSI Technology and Circuits, 2022)

Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress. - Xinze Li; Yuxuan Wu; Qiao Teng; Ying Sun; Xiao Gong; Guillaume Besnard; Christophe Maleville; Olivier Weber; Rui Zhang; Bing Chen; Dawei Gao; Ran Cheng (ICICDT, 2023)