A 4.2GHz 0.3mm2 256kb Dual-Vcc SRAM Building Block in 65nm CMOS. - Muhammad M. Khellah; Nam-Sung Kim; Jason Howard; Gregory Ruhl; Yibin Ye; James W. Tschanz; Dinesh Somasekhar; Nitin Borkar; Fatih Hamzaoglu; Gunjan Pandya; Ali Farhang; Kevin Zhang 001; et al. (ISSCC, 2006)

A 256-Kb Dual-VCC SRAM Building Block in 65-nm CMOS Process With Actively Clamped Sleep Transistor. - Muhammad M. Khellah; Dinesh Somasekhar; Yibin Ye; Nam-Sung Kim; Jason Howard; Gregory Ruhl; Murad Sunna; James W. Tschanz; Nitin Borkar; Fatih Hamzaoglu; Gunjan Pandya; Ali Farhang; et al. (IEEE J. Solid State Circuits, 2007)

Process, Temperature, and Supply-Noise Tolerant 45nm Dense Cache Arrays With Diffusion-Notch-Free (DNF) 6T SRAM Cells and Dynamic Multi-Vcc Circuits. - Muhammad M. Khellah; Nam-Sung Kim; Yibin Ye; Dinesh Somasekhar; Tanay Karnik; Nitin Borkar; Gunjan Pandya; Fatih Hamzaoglu; Tom Coan; Yih Wang; Kevin Zhang 001; Clair Webb; et al. (IEEE J. Solid State Circuits, 2009)

Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process. - Dinesh Somasekhar; Balaji Srinivasan; Gunjan Pandya; Fatih Hamzaoglu; Muhammad M. Khellah; Tanay Karnik; Kevin Zhang 001 (IEEE J. Solid State Circuits, 2010)

On-Chip High-Resolution Timing Characterization Circuits for Memory IPs. - Amit Agarwal 001; Steven Hsu; Mark A. Anders 001; Gunjan Pandya; Ram Krishnamurthy 001; James W. Tschanz; Vivek De (ESSCIRC, 2022)