Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. - Minjung Jin; Kangjung Kim; Yoohwan Kim; Hyewon Shim; Jinju Kim; Gunrae Kim; Sangwoo Pae (Microelectron. Reliab., 2018)

Reliability of Industrial grade Embedded-STT-MRAM. - Yongsung Ji; Hyunjae Goo; Jungman Lim; Tae-Young Jeong; Taiki Uemura; Gun Rae Kim; Boil Seo; Seungbae Lee; Goeun Park; Jeongmin Jo; Sang-Il Han; Kilho Lee; et al. (IRPS, 2020)

Highly Reliable 28nm Embedded Flash Process Development for High-Density and High-Speed Automotive Grade-1 Application. - Jaehun Lee; Youngcheon Jeong; Kyongsik Yeom; Changmin Jeon; Jongsung Woo; Sangjin Lee; Ga-Young Lee; Dong-Hwee Hwang; Yong Seok Chung; Minji Seo; Dong-Hyun Kim; DalHwan Kim; et al. (IMW, 2021)

Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology. - Taiki Uemura; Byungjin Chung; Jeongmin Jo; Mijoung Kim; Dalhee Lee; Gunrae Kim; Seungbae Lee; Taesjoong Song; Hwasung Rhee; Brandon Lee; Jaehee Choi (IRPS, 2021)