A Refresh-Less eDRAM Macro With Embedded Voltage Reference and Selective Read for an Area and Power Efficient Viterbi Decoder. - Woong Choi; Gyuseong Kang; Jongsun Park 001 (IEEE J. Solid State Circuits, 2015)

A DRAM based physical unclonable function capable of generating >1032 Challenge Response Pairs per 1Kbit array for secure chip authentication. - Qianying Tang; Chen Zhou; Woong Choi; Gyuseong Kang; Jongsun Park 001; Keshab K. Parhi; Chris H. Kim (CICC, 2017)

Embedded DRAM-Based Memory Customization for Low-Cost FFT Processor Design. - Gyuseong Kang; Woong Choi; Jongsun Park 001 (IEEE Trans. Very Large Scale Integr. Syst., 2017)

Charge-Recycling based Redundant Write Prevention Technique for Low Power SOT-MRAM. - Gyuseong Kang; Yunho Jang; Jongsun Park 001 (ISCAS, 2018)

Spin Orbit Torque Device based Stochastic Multi-bit Synapses for On-chip STDP Learning. - Gyuseong Kang; Yunho Jang; Jongsun Park 001 (ISLPED, 2018)

Charge-Recycling-Based Redundant Write Prevention Technique for Low-Power SOT-MRAM. - Gyuseong Kang; Jongsun Park 001 (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Stochastic SOT Device Based SNN Architecture for On-Chip Unsupervised STDP Learning. - Yunho Jang; Gyuseong Kang; Taehwan Kim; Yeongkyo Seo; Kyung-Jin Lee; Byong-Guk Park; Jongsun Park 001 (IEEE Trans. Computers, 2022)

A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V. - Gyuseong Kang; Hyunjin Shin; Hyuntaek Jung; Sunkyu Lee; Jaeseung Choi 001; Sangyeop Baeck; Hyunsung Jung; Daeshik Kim; Sohee Hwang; Shinhee Han; Yongsung Ji; Sei Seung Yoon (VLSI Technology and Circuits, 2023)

A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm2 at 0.60V for Auto-G1 Applications. - Gyuseong Kang; Hyunjin Shin; Sanggyeong Won; Dohui Kim; Kyuseong Kim; Soohoh Seol; Sunkyu Lee; Hangil Lee; Yeonho Jung; Jaechul Shim; Kiseok Suh; Sohee Hwang; et al. (VLSI Technology and Circuits, 2024)

14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles. - Joosung Oh; Jaehyeon Park; Kiseok Suh; Kangmoon Lee; Sohee Hwang; Myeongjun Bak; Honghyun Kim; Baeseong Kwon; DongKyu Lee; Minkwan Kim; Seungmo Noh; Jongmin Lee; et al. (VLSI Technology and Circuits, 2024)