Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. - Wolfgang Winkler; Johannes Borngräber; Heide Erzgraeber; Ha. Erzgraber; Bernd Heinemann; Dieter Knoll; H. Jörg Osten; Michael Pierschel; Klaus Pressel; Peter Schley (CICC, 1999)

A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications. - Günter Grau; Ulrich Langmann; Wolfgang Winkler; Dieter Knoll; Jörg Osten; Klaus Pressel (IEEE J. Solid State Circuits, 2000)

Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide. - H. Jörg Osten; J. P. Liu; H.-J. Müssig; P. Zaumseil (Microelectron. Reliab., 2001)

Epitaxial growth of non-cubic silicon. - Andreas Fissel; C. Wang; E. Bugiel; H. Jörg Osten (Microelectron. J., 2005)

Silicon in functional epitaxial oxides: A new group of nanostructures. - Andreas Fissel; Apurba Laha; E. Bugiel; D. Kühne; M. Czernohorsky; Rytis Dargis; H. Jörg Osten (Microelectron. J., 2008)

Structural and strain relaxation study of epitaxially grown nano-thick Nd2O3/Si(111) heterostructure. - Jinxing Wang; Apurba Laha; Andreas Fissel; Dominik Schwendt; Rytis Dargis; Tatsuro Watahiki; Roman Shayduk; Wolfgang Braun; Tianmo Liu; H. Jörg Osten (NEMS, 2009)

Integration of low dimensional crystalline Si into functional epitaxial oxides. - Apurba Laha; E. Bugiel; Rytis Dargis; Dominik Schwendt; M. Badylevich; V. V. Afanasev; A. Stesmans; Andreas Fissel; H. Jörg Osten (Microelectron. J., 2009)